Manufacturing method for conductive layer of integrated circuit, involves depositing oxide, nitride or oxynitride of metal, such as titanium, tungsten, molybdenum, indium, tin or zinc on surface by gas phase depositing process

摘要

The manufacturing method involves depositing an oxide, nitride or oxynitride of a metal, such as titanium, tantalum, strontium, niobium, tungsten, molybdenum, indium, tin or zinc on a surface by a gas phase depositing process (10). Another metal, such as ruthenium, iridium, rhodium, palladium, osmium, platinum, tungsten, silver, gold or nickel or an oxide of another metal is deposited on the surface by another gas phase depositing process. The two gas phase depositing processes are alternative or applied together.