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A saturation control loop for a BJT or IGBT in a switching power supply

机译:开关电源中BJT或IGBT的饱和控制环路

摘要

The base drive to a switching transistor Q1 in a switched mode power supply is adjusted in dependence on the sensed collector voltage so that the transistor can conduct the required load current without becoming saturated. Saturation would delay turn-off and increase turn-off switching loss. The transistor is switched on quickly by a large initial base current 410 to reduce turn-on switching loss but the base drive is then reduced. The left plate of the collector voltage sensing capacitor 400 is clamped to earth 406 during the turn-on process. This node is then allowed to float so that collector voltage variations can be sensed by the leaky peak detector 1202. The base drive may be adapted in dependence on the measured turn-off time in a previous cycle (figure 35). Collector dv/dt may be controlled during turn-on and turn-off (figure 31). The on-period may be ended early if the collector voltage exceeds a threshold.
机译:根据感测到的集电极电压来调节开关模式电源中对开关晶体管Q1的基极驱动,以便晶体管可以传导所需的负载电流而不会变得饱和。饱和会延迟关断并增加关断开关损耗。晶体管通过较大的初始基极电流410快速导通,以减少导通开关损耗,但随后减小了基极驱动。集电极电压感测电容器400的左板在导通过程中被钳位到地406。然后允许该节点浮动,从而可以由泄漏峰值检测器1202感测集电极电压的变化。可以根据先前周期中测得的关闭时间来调整基本驱动器(图35)。集电极dv / dt可以在开启和关闭期间进行控制(图31)。如果集电极电压超过阈值,则开启周期可以提前结束。

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