首页> 外国专利> QUANTUM DOT-METAL OXIDE COMPOSITE, METHOD FOR PRODUCING QUANTUM DOT-METAL OXIDE COMPOSITE, AND LIGHT-EMITTING DEVICE CONTAINING QUANTUM DOT-METAL OXIDE COMPOSITE

QUANTUM DOT-METAL OXIDE COMPOSITE, METHOD FOR PRODUCING QUANTUM DOT-METAL OXIDE COMPOSITE, AND LIGHT-EMITTING DEVICE CONTAINING QUANTUM DOT-METAL OXIDE COMPOSITE

机译:量子点氧化物复合物,量子点氧化物复合物的制造方法以及包含量子点氧化物复合物的发光装置

摘要

PROBLEM TO BE SOLVED: To provide a quantum dot-metal oxide composite, a method for producing the quantum dot-metal oxide composite, and a light-emitting device containing the quantum dot-metal oxide composite.;SOLUTION: The quantum dot-metal oxide composite includes quantum dots and a metal oxide forming a three-dimensional network with the quantum dots. The quantum dots are an Si-based nano-crystal, a II-VI-based compound semiconductor nano-crystal such as CdSe, a III-V-based compound semiconductor nano-crystal such as GaN, or a IV-VI-based compound semiconductor nano-crystal such as SbTe. The metal oxide is an oxide of Si, Ti, or Al. The quantum dot-metal oxide composite is obtained by treating the surface of the quantum dots with an amino-alcohol and the like, then reacting the metal oxide therewith, and forming a three-dimensional network, and is used as a wavelength converting portion of the light-emitting device.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种量子点金属氧化物复合物,一种制备该量子点金属氧化物复合物的方法以及一种包含该量子点金属氧化物复合物的发光器件。氧化物复合物包括量子点和与量子点形成三维网络的金属氧化物。量子点是Si基纳米晶体,CdSe等II-VI基化合物半导体纳米晶体,GaN等III-V基化合物半导体纳米晶体或IV-VI基化合物半导体纳米晶体,如SbTe。金属氧化物是Si,Ti或Al的氧化物。量子点-金属氧化物复合物是通过用氨基醇等处理量子点的表面,然后使金属氧化物反应并形成三维网络而获得的,并用作波长转换部分。发光器件;版权所有:(C)2010,日本特许厅&INPIT

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