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Electrolysis cell layout, to be used by the design manner of the semiconductor integrated circuit device and the semiconductor integrated circuit and the design of the semiconductor production mannered

机译:电解槽布局,将由半导体集成电路器件和半导体集成电路的设计方式以及所设计的半导体生产方式使用

摘要

PPROBLEM TO BE SOLVED: To provide a cell layout which can suppress change of a metal layer to the minimum, and to provide a semiconductor integrated circuit device using the same, a method of designing a semiconductor integrated circuit, and a method of manufacturing semiconductor of the semiconductor integrated circuit. PSOLUTION: A cell layout is used for designing a semiconductor integrated circuit. The cell layout relates to a standard cell or a macro cell having an input cell terminal 4a, an output cell terminal 4b, and a plurality of cell units (Delay 1-4) arranged in series. On a metal layer of the cell unit, input dummy metal wiring 1a capable of carrying out mutual connection between adjacent cell units and output dummy metal wiring 1b set for connection in the same manner as with the input dummy metal interconnect line 1a traversing the metal layer and an input terminal 11 and an output terminal 12 provided between the input dummy metal wiring 1a and the output dummy metal wiring 1b are arranged. PCOPYRIGHT: (C)2005,JPO&NCIPI
机译:

要解决的问题:提供一种可以将金属层的变化抑制到最小的单元布局,并提供使用该单元布局的半导体集成电路器件,一种设计半导体集成电路的方法以及一种用于制造半导体集成电路的方法。制造半导体集成电路的半导体。

解决方案:单元布局用于设计半导体集成电路。单元布局涉及具有输入单元端子4a,输出单元端子4b和串联布置的多个单元单元(延迟1-4)的标准单元或宏单元。在电池单元的金属层上,能够与相邻的电池单元之间进行相互连接的输入虚拟金属布线1a和以与穿过金属层的输入虚拟金属互连线1a相同的方式设定为连接的输出虚拟金属布线1b。在输入虚拟金属配线1a和输出虚拟金属配线1b之间配置有输入端子11和输出端子12。

版权:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP4523290B2

    专利类型

  • 公开/公告日2010-08-11

    原文格式PDF

  • 申请/专利权人 株式会社リコー;

    申请/专利号JP20040004180

  • 发明设计人 市宮 淳次;

    申请日2004-01-09

  • 分类号H01L21/82;H01L21/822;H01L27/04;H03K19/00;

  • 国家 JP

  • 入库时间 2022-08-21 19:01:53

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