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APPARATUS AND METHOD OF DEPOSITING FILMS USING BIAS AND CHARGING BEHAVIOR OF NANOPARTICLES FORMED DURING CHEMICAL VAPOR DEPOSITION
APPARATUS AND METHOD OF DEPOSITING FILMS USING BIAS AND CHARGING BEHAVIOR OF NANOPARTICLES FORMED DURING CHEMICAL VAPOR DEPOSITION
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机译:在化学气相沉积过程中利用偏压和纳米颗粒带电行为沉积薄膜的装置和方法
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摘要
Provided are an apparatus and a method of depositing films capable of controlling deposition rate and film properties using the charging behavior of nanoparticles formed in gas phase. The apparatus includes a chamber in which a substrate is loaded, a gas supply system configured to introduce a reaction gas into the chamber, a filament configured to emit heat for dissociating the introduced reaction gas, a power supply configured to apply a constant alternate current or direct current voltage, and a bias supply unit configured to apply a bias to at least one of a top, a side and a bottom of the substrate using a voltage applied from the power supply while a film is deposited on the substrate from the dissociated reaction gas, the bias supply unit being separated from the substrate.
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