首页> 外国专利> Repair method for propagating epitaxial crystalline structures by heating to within 0-100° f of the solidus

Repair method for propagating epitaxial crystalline structures by heating to within 0-100° f of the solidus

机译:通过加热到固相线0-100°f以内传播外延晶体结构的修复方法

摘要

A repair method of propagating epitaxial crystalline structures is provided. The repair method broadly comprises the steps of providing a substrate to be repaired, placing an additive material as a preformed shape onto an area of the substrate to be repaired, utilizing a heat source to heat an entire volume of the additive material and an area adjacent to the additive material to within 0-100° F. of their solidus temperatures, holding at the fusion temperature for a time sufficient to allow grain growth and orientation to occur, and ramping down the heat source at a predetermined controlled rate until solidification is complete.
机译:提供了一种传播外延晶体结构的修复方法。修复方法大致包括以下步骤:提供要修复的基板,将预成型形状的添加剂材料放置在要修复的基板区域上,利用热源加热整个体积的添加剂材料和邻近区域使添加剂材料的温度保持在固相线温度的0-100°F之内,在熔融温度下保持足够的时间以允许晶粒生长和取向发生,并以预定的受控速率降低热源,直到固化完成。

著录项

  • 公开/公告号US7784668B2

    专利类型

  • 公开/公告日2010-08-31

    原文格式PDF

  • 申请/专利权人 GARY CHARLES SHUBERT;

    申请/专利号US20050303624

  • 发明设计人 GARY CHARLES SHUBERT;

    申请日2005-12-16

  • 分类号B23K31/00;B23K28/00;B23K35/12;B23K1/19;

  • 国家 US

  • 入库时间 2022-08-21 18:49:56

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