RESISTANCE CHANGE RECORDING ELEMENT, A PHASE TRANSITION RECORDING ELEMENT, A RESISTANCE CHANGE RANDOM ACCESS MEMORY, AND A PHASE TRANSITION RANDOM ACCESS MEMORY AND A INFORMATION INTERPRETATION METHOD THEREOF

摘要

PURPOSE: A resistance change recording element, a phase transition recording element, a resistance change random access memory, and a phase transition random access memory and an information interpretation method thereof are provided to drive an exact element by separating a part used in recording information and reading information.;CONSTITUTION: A resistance change recording element comprises a substrate, a bit line, a resistance change layer(240), and a word line(250). A channel area is formed between a source part(211) and a drain part(212). A bit line is formed on a channel region and is made of conductive materials. A resistance change layer is formed on the bit line and is made of materials.;COPYRIGHT KIPO 2010