SEMICONDUCTOR DEVICE HAVING A RECESS GATE AND AN ISOLATION STRUCTURE AND A METHOD FOR FABRICATING THE SAME, CAPABLE OF PREVENTING LEAKAGE CURRENT CAUSED BY LOCAL CONCENTRATION OF VOLTAGE

摘要

PURPOSE: A semiconductor device having a recess gate and an isolation structure and a method for fabricating the same are provided to restrain degradation of performance characteristic of a transistor by a tensile stress by implementing shallow trench isolation structure using a SOD(Spin-On Dielectric) layer.;CONSTITUTION: A part of an active area(101) of a semiconductor substrate is etched selectively and a recess groove is formed. A trench(103) is formed by selectively etching an element isolation region of a semiconductor substrate establishing an active area. A first spin-on dielectric layer(411) partially fills the trench lower than the bottom portion of the recess groove is formed. A second spin-on dielectric layer(450) filling the trench on the first spin-on dielectric layer is formed. A gate(620) of the transistor filling the recess groove is formed.;COPYRIGHT KIPO 2010