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METHOD FOR GROWING A NANOWIRE ON A SUBSTRATE, CAPABLE OF CONTROLLING THE TRANSFORMATION OF AN SE COLLOID TO THE NANOWIRE BY CHANGING THE SURFACE ENERGY OF A SOLID SUBSTRATE
METHOD FOR GROWING A NANOWIRE ON A SUBSTRATE, CAPABLE OF CONTROLLING THE TRANSFORMATION OF AN SE COLLOID TO THE NANOWIRE BY CHANGING THE SURFACE ENERGY OF A SOLID SUBSTRATE
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机译:在基质上生长纳米线的方法,该方法能够通过改变固体基质的表面能来控制SE胶体向纳米线的转变
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摘要
PURPOSE: A method for growing a nanowire on a substrate is provided to grow a nanowire into various patterns by controlling the surface energy of a substrate, to easily grow the nanowire horizontally at room temperature without an inefficient high temperature deposition process, and to easily change the horizontally oriented nanowires into other compound semiconductors.;CONSTITUTION: A method for growing a nanowire on a substrate comprises the following steps: forming a substrate into a hydrophilic surface; depositing a VI group colloid or a precursor on the surface of the substrate and dispersing the materials; horizontally growing the colloid or the precursor on the hydrophilic surface of the substrate by heating the substrate; and forming a network which is chemically interacted by additionally heating the growing nonowire. The VI group colloid is a Te or Se colloid.;COPYRIGHT KIPO 2010
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