首页> 外国专利> SILICA GLASS CRUCIBLE FOR PULLING-UP SILICON SINGLE CRYSTAL, A METHOD FOR MANUFACTURING THE SAME AND A METHOD FOR MANUFACTURING THE SILICON SINGLE CRYSTAL, CAPABLE OF SUPPRESSING THE GENERATION OF A SILICON OXIDE GAS

SILICA GLASS CRUCIBLE FOR PULLING-UP SILICON SINGLE CRYSTAL, A METHOD FOR MANUFACTURING THE SAME AND A METHOD FOR MANUFACTURING THE SILICON SINGLE CRYSTAL, CAPABLE OF SUPPRESSING THE GENERATION OF A SILICON OXIDE GAS

机译:可拉起硅单晶的石英玻璃,一种制造该硅微晶的方法和一种制造硅单晶的方法,可抑制氧化硅气体的产生

摘要

PURPOSE: A quartz glass crucible for pulling up silicon single crystal, a method for manufacturing the same and a method for manufacturing the silicon single crystal are provided to prevent the generation of a cavity defect due to a void by reducing the generation of voids during a silicon single crystal manufacturing process.;CONSTITUTION: A quartz glass crucible(10) includes a linear body part(10A), a curved part(10C) and a bottom part(10B). A first natural quartz glass layer(11) composes the linear body part and the outer layer of the bottom part. A second natural quartz glass layer(13) is formed in the bottom part. A synthetic quartz glass layer(12) composes the inner layer of the quartz glass layer.;COPYRIGHT KIPO 2010
机译:目的:提供一种用于提拉硅单晶的石英玻璃坩埚,其制造方法和制造该硅单晶的方法,以通过减少形成期间的空隙的产生来防止由于空隙引起的空腔缺陷的产生。组成:石英玻璃坩埚(10)包括线状部分(10A),弯曲部分(10C)和底部(10B)。第一天然石英玻璃层(11)构成线状体部分和底部的外层。在底部形成第二天然石英玻璃层(13)。合成石英玻璃层(12)构成石英玻璃层的内层。; COPYRIGHT KIPO 2010

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号