METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, CAPABLE OF OBTAINING A POLISHED SURFACE WITH UNIFORM THICKNESS AND OPTIMALLY IMPROVING THE PLANARITY OF A BROAD AREA BY FORMING A CHEMICAL MECHANICAL POLISHING PROCESS USING SLURRY HAVING HIGH POLISHING SELECTIVE RATIO TO THE POLISHED SURFACE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to secure reliability and profitability of the device by improving polishing efficiency and polishing properties including high polishing selective ratio to a polished surface and high planarity of a broad area.;CONSTITUTION: A method for manufacturing a semiconductor device including a chemical mechanical polishing process using slurry. The slurry comprises: cerium oxide powder which has bimodal particle size distribution and the volume ratio of a cerium oxide particle with a particle size of 0.01~1 microns and a cerium oxide particle with a particle size of 1~10 microns is 10:90 ~ 90:10; first polyacryliac acid having an average molecular weight of 2,000~8,000 and second polyacryliac acid having an average molecular weight of 5,000~10,000; a compound having an average molecular weight of 30~500 and including a hydroxyl group or a carboxyl group; and water.;COPYRIGHT KIPO 2010