SEMICONDUCTOR DEVICE CAPABLE OF IMPROVING A DRAIN-INDUCED BARRIER LOWERING PHENOMENON WITHOUT A GATE INDUCED DRAIN LEAKAGE PHENOMENON AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to secure potential barrier difference between a source region and a channel by forming an inner gate inside a main gate part adjacent to the source region.;CONSTITUTION: A main gate(120) is formed on a semiconductor substrate(100). A source region(140s) and a drain region(140d) are formed inside the surface of the semiconductor substrate on both sides of main gate. An inner gate(110) is formed inside the main gate part adjacent to the source region. A spacer(108) is formed on both sides of the inner gate. A first contact is contacted with the main gate. A second contact is contacted with the inner gate.;COPYRIGHT KIPO 2011