NEGATIVE-TONE ELECTRON BEAM LITHOGRAPHY RESIST COMPOSITION INCLUDING AN AZIDE-FUNCTIONALIZED POLYSTYRENE RANDOM COPOLYMER, CAPABLE OF EASILY CONTROLLING THE THICKNESS OF RESIST USING A SOLVENT

摘要

PURPOSE: A negative-tone electron beam lithography resist composition is provided to be economically manufactured, to easily control a crosslinked part by controlling a synthesis ratio, to easily control the thickness of the electron beam resist, and to be applied to a lithography process.;CONSTITUTION: A negative-tone electron beam lithography resist composition includes a polystyrene random copolymer including an azide functional group. The dose of the electron beam resist is 40 μC/cm^2 - 116 μC/cm^2. The polystyrene random copolymer is synthesized by polymerizing a styrene monomer and 1-(chloromethyl)-4-vinylbenzene through a RAFT(reversible addition-fragmentation chain transfer) method.;COPYRIGHT KIPO 2011