SUBSTRATE PROCESS METHOD, CAPABLE OF FORMING A PLURALITY OF STRAIGHT LINE PORTIONS ON A MASK FILM THROUGH A MINUTE PITCH

摘要

PURPOSE: A substrate process method is provided to form an opening on a target film equally by etching the target film with a straight line portions as a mask.;CONSTITUTION: An organic film(38) comprising of a plurality of straight line portions(38a) is formed on a target film(37). The target film is exposed by etching a hard film covering the straight line portions. The exposed organic film is selectively removed. The hard film is etched, and then the target film is etched by using the hard film as a mask.;COPYRIGHT KIPO 2011