NON-VOLATILE MEMORY DEVICE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF FORMING THE WIDTH OF AN ACTIVE ARE TO BE PROPORTIONAL TO THE LENGTH OF A STRING

摘要

PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to prevent the generation of the resistance difference between strings by forming the widths of joining areas differently.;CONSTITUTION: A string(STe, STo) is serially connected between the source select transistor and the drain select transistor. A joining area(JC) is formed on a semiconductor substrate between the source select transistor, the drain select transistor, and the memory cell. A source contact plug(SCP1, SCP2) is connected to a source of the source select transistor.;COPYRIGHT KIPO 2011