A Cu-doped nitride diluted magnetic semiconductor and a manufacturing method thereof are provided to easily control doping concentration of Cu by controlling an amount of an ammonia gas and a chloridation metal gas. A metal source(1), a cupric chloride(2), and a substrate(3) are arranged inside a furnace(6). The metal source is at least one among gallium, indium, and aluminum. The metal source and the cupric chloride are heated at a temperature of 600~1000‹C. An ammonia gas(4) is injected inside the furnace with a flow rate of 1~100sccm. A chloridation metal gas is generated by reaction of the metal source, Cu, and chlorine. A Cu-doped GaN is grown on the substrate by reaction of the chloridation metal gas and the ammonia gas.
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