A semiconductor device and method for the deformation production in the case of silicon-based transistors by the use of implantation techniques for the production of a deformation - inducing layer under the channel region

摘要

By incorporating a semiconductor species having the same valence and a different covalent radius compared to the base semiconductor material on the basis of an ion implantation process, a strain-inducing material may be positioned locally within a transistor at an appropriate manufacturing stage, thereby substantially not contributing to overall process complexity and also not affecting the further processing of the semiconductor device. Hence, a high degree of flexibility may be provided with respect to enhancing transistor performance in a highly local manner.