Complexes with Small Singlet-Triplet Energy Intervals for Use in Opto-Electronic Devices (Singlet Harvesting Effect)

摘要

The invention relates to the use of a polynuclear metal or transition metal complex having a small DeltaE distance, in particular between 50 cm-1 and 2000 cm-1, between the lowest triplet state and the overlying and via thermal re-occupation of the triplet occupied singlet state in an organic electronic device. The invention also relates to the use of the strong absorptions of such polynuclear metal complexes, especially in OSCs.