VOLATILE MEMORY INCLUDING GATE DIELECTRIC HAVING CHARGE TRAP, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a volatile memory that has a desired threshold voltage value although relatively lowering the doping concentration of a channel ion implantation region.SOLUTION: The volatile memory includes: a cell transistor having a lower gate dielectric, an intermediate gate dielectric for charge trapping, and an upper gate dielectric, all laminated in order as a gate dielectric; and a transistor for logic, having a single layer of an oxide film as a gate dielectric.