首页> 外国专利> MOISTURE DETECTION DEVICE, DETECTION DEVICE OF MOISTURE IN LIVING BODY, DETECTION DEVICE OF MOISTURE IN NATURAL PRODUCT, AND DETECTION DEVICE OF MOISTURE IN PRODUCT/MATERIAL

MOISTURE DETECTION DEVICE, DETECTION DEVICE OF MOISTURE IN LIVING BODY, DETECTION DEVICE OF MOISTURE IN NATURAL PRODUCT, AND DETECTION DEVICE OF MOISTURE IN PRODUCT/MATERIAL

机译:水分检测装置,生物体内水分检测装置,天然产物中水分检测装置以及产品/材料中水分检测装置

摘要

PROBLEM TO BE SOLVED: To provide a moisture detection device capable of detecting moisture with high sensitivity by using an InP system photodiode wherein a dark current is reduced without a cooling mechanism and light-receiving sensitivity is enlarged to a wavelength of 1.8 μm or more.;SOLUTION: This moisture detection device is described as follows: a light receiving layer 3 has a multiple quantum well structure of III-V group semiconductor; a pn junction 15 is formed by diffusing selectively an impurity element into the light receiving layer; band gap energy of a diffusion concentration distribution adjustment layer is smaller than band gap energy of III-V group semiconductor substrate; an impurity concentration in the light receiving layer is 5×1016/cm3 or less; an n-type impurity concentration before diffusion of the diffusion concentration distribution adjustment layer is 2×1015/cm3 or less, and has a low impurity concentration range in a thickness range on the light receiving layer side; and a detection device receives light having at least one wavelength included in an absorption band of water having the wavelength of 3 μm or less, to thereby detect moisture.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种能够通过使用InP系统光电二极管以高灵敏度检测水分的水分检测装置,其中在没有冷却机构的情况下减小了暗电流,并且将光接收灵敏度扩大到1.8μm或1.8nm的波长。解决方案:该水分检测装置描述如下:光接收层3具有III-V族半导体的多量子阱结构;通过选择性地将杂质元素扩散到光接收层中来形成pn结15。扩散浓度分布调整层的带隙能量小于III-V族半导体衬底的带隙能量。受光层中的杂质浓度为5×10 16 / cm 3 以下。扩散浓度分布调整层的扩散前的n型杂质浓度为2×10 15 / cm 3 以下,并且在厚度上具有低的杂质浓度范围在光接收层侧的范围;并且,检测装置接收波长为3μm以下的水的吸收带中所包含的至少一种波长的光,从而检测水分。(COP)版权:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP2011137836A

    专利类型

  • 公开/公告日2011-07-14

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC IND LTD;

    申请/专利号JP20110059487

  • 发明设计人 INOGUCHI YASUHIRO;NAGAI YOICHI;

    申请日2011-03-17

  • 分类号G01N21/35;G01J1/02;H01L31/10;H01L27/146;

  • 国家 JP

  • 入库时间 2022-08-21 18:25:30

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