QUASI-ELECTROSTATIC FIELD ANALYZER AND QUASI-ELECTROSTATIC FIELD ANALYSIS METHOD

摘要

PROBLEM TO BE SOLVED: To provide a quasi-electrostatic field analyzer and analysis method, which detects the condition of a micro-fine place with high accuracy and can be applied to the analysis of defects generated in a semiconductor device.;SOLUTION: An object to be inspected 10 is irradiated with a light via a near-field probe 15 having a hole with a size smaller than the wavelength of a laser light. A quasi-electrostatic field detection probe 16 is disposed near the surface of the object to be inspected 10 and detects the quasi-electrostatic field generated by the light irradiation. A control part 20 outputs the position information corresponding to the light irradiation position of the object to be inspected 10 to an image processing part 19. The image processing part 19 performs signal processing by associating the quasi-electrostatic field intensity detected by the quasi-electrostatic field detection probe 16 to the position information inputted from the control part 20, and generates the image of the surface condition of the object to be inspected 10 along with the movement of a stage 11.;COPYRIGHT: (C)2011,JPO&INPIT