首页> 外国专利> Production method for exposure mask defect inspection method of the mask blank glass substrate, mask blank glass substrate, mask blank, exposure mask, mask blank manufacturing method for glass substrate, and method of manufacturing mask blank

Production method for exposure mask defect inspection method of the mask blank glass substrate, mask blank glass substrate, mask blank, exposure mask, mask blank manufacturing method for glass substrate, and method of manufacturing mask blank

机译:掩模坯料玻璃基板的曝光掩模缺陷检查方法的制造方法,掩模坯料玻璃基板,掩模坯料,曝光掩模,玻璃基板的掩模坯料制造方法以及掩模坯料的制造方法

摘要

PROBLEM TO BE SOLVED: To improve the pattern transfer precision by detecting inner defects substantially all over the areas of a glass substrate including inner defects near the main surface largely affecting the pattern transfer to other objects.;SOLUTION: It has a preparation step of preparing a composite quartz substrate 4 having an end surface 2 to input short wavelength light of 200 nm or less, and a checking step of introducing the short wavelength light from the end surface 2 and receiving through the other end surface the light emitted by the inner defects of the glass substrate in a wavelength longer than the above short wavelength light to find inner defects. When manufacturing a mask blank glass substrate from a composite quartz substrate free from the inner defects as found in the checking step, it prepares a composite quartz substrate 4 which has a small chamfer 51 made on the end surface 2 with the width t smaller than the width T of the chamfers 53, 57 on the end surface 18 facing this end surface in the above preparation step, and introduces the above short wavelength light to the side surface 59 of the end surface 2 in the above checking step.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:通过检测基本上在玻璃基板整个区域内的内部缺陷(包括主表面附近的内部缺陷,在很大程度上影响图案向其他物体的转移)来提高图案转移的精度;解决方案:它具有准备步骤复合石英基板4,该石英基板4具有端面2以输入200nm以下的短波长的光,并具有从端面2入射该短波长的光并通过另一端面接收由内部缺陷发出的光的检查工序。在比上述短波长光更长的波长下对玻璃基板进行光散射以发现内部缺陷。当由没有检查步骤中发现的内部缺陷的复合石英基板制造掩模毛坯玻璃基板时,其制备复合石英基板4,该复合石英基板4在端面2上具有小的倒角51,该倒角的宽度t小于该倒角。在上述准备步骤中,在面向该端面的端面18上的倒角53、57的宽度T,并且在上述检查步骤中,将上述短波长光引入端面2的侧面59。 C)2007,日本特许厅

著录项

  • 公开/公告号JP4683416B2

    专利类型

  • 公开/公告日2011-05-18

    原文格式PDF

  • 申请/专利权人 HOYA株式会社;

    申请/专利号JP20050171153

  • 发明设计人 田辺 勝;

    申请日2005-06-10

  • 分类号G03F1/08;G03F1/14;

  • 国家 JP

  • 入库时间 2022-08-21 18:19:57

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