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The solar battery, forming the antireflection film of the nitriding silicone film on

机译:太阳能电池,在其上形成氮化硅膜的减反射膜

摘要

PROBLEM TO BE SOLVED: To provide a solar cell including a silicon nitride film having high H2 passivation effect as an antireflection film.;SOLUTION: The silicon nitride film is used as an antireflection film of the solar cell composed of a silicon substrate. An antireflection film forming apparatus 301 forms the silicon nitride film. The silicon substrate carried to a chamber 302 is carried to a surface wave excitation plasma CVD apparatus 303 with the aid of a carrying apparatus stored in a carrying chamber 305. The surface wave excitation plasma CVD apparatus 303 forms the silicon nitride film. The silicon nitride film is carried to a heating chamber 304 by the carrying apparatus stored in the carrying chamber 305. The silicon nitride film undergoes a heat treatment in a hydrogen atmosphere by a lamp heater in the heating chamber 304.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种太阳能电池,该太阳能电池包括具有高H 2 钝化效果的氮化硅膜作为抗反射膜。;解决方案:氮化硅膜用作太阳能电池的抗反射膜。由硅衬底组成。防反射膜形成装置301形成氮化硅膜。借助于存储在运送室305中的运送装置,将运送到腔室302的硅基板运送到表面波激发等离子体CVD装置303。表面波激发等离子体CVD装置303形成氮化硅膜。氮化硅膜由存储在运送室305中的运送装置运送到加热室304。氮化硅膜在加热室304中的灯加热器下在氢气氛中进行热处理。版权所有:(C) 2006年,日本特许厅

著录项

  • 公开/公告号JP4657630B2

    专利类型

  • 公开/公告日2011-03-23

    原文格式PDF

  • 申请/专利权人 株式会社島津製作所;

    申请/专利号JP20040154795

  • 发明设计人 猿渡 哲也;

    申请日2004-05-25

  • 分类号C23C16/42;H01L21/318;H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-21 18:18:23

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