首页> 外国专利> A semiconductor integrated circuit device, a digital camera, digital video camera, a computer system, a portable computer system, the logical variable LSI device, IC card, a navigation system, a robot, an image display apparatus, optical disk storage devices

A semiconductor integrated circuit device, a digital camera, digital video camera, a computer system, a portable computer system, the logical variable LSI device, IC card, a navigation system, a robot, an image display apparatus, optical disk storage devices

机译:半导体集成电路装置,数字照相机,数字摄像机,计算机系统,便携式计算机系统,逻辑可变LSI装置,IC卡,导航系统,机器人,图像显示装置,光盘存储装置

摘要

PPROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which uses a plate line in common while achieving relatively small memory cells and is operated at high speed by eliminating delay caused by series connection of the memory cells. PSOLUTION: The semiconductor integrated circuit device includes: a plurality of first memory cells each of which includes cell transistors Q0-Q3 whose gate terminal is connected to a word line; and ferroelectric capacitors C0-C3 which are connected at one end to a source terminal of the cell transistor. The drain terminal of each of the cell transistors of the plurality of first memory cells is used as a first local bit line LBL, and the other end of each of the ferroelectric capacitors is used as a first plate line PL. A first reset transistor has a source terminal connected to the first plate line and also a drain terminal connected to the first local bit line. A first block selection transistor QS has a source terminal connected to the first local bit line, and also has a drain terminal connected to the first bit line. PCOPYRIGHT: (C)2008,JPO&INPIT
机译:<要解决的问题:提供一种半导体集成电路器件,该半导体集成电路器件在实现相对较小的存储单元的同时共同使用板极线,并且通过消除由存储单元的串联引起的延迟来高速操作。

解决方案:半导体集成电路器件包括:多个第一存储单元,每个第一存储单元包括其栅极端子连接到字线的单元晶体管Q0-Q3;铁电电容器C0-C3的一端连接到单元晶体管的源极端子。多个第一存储单元的每个单元晶体管的漏极端子被用作第一局部位线LBL,并且每个铁电电容器的另一端被用作第一平板线PL。第一复位晶体管具有连接到第一板极线的源极端子以及连接到第一局部位线的漏极端子。第一块选择晶体管QS具有连接到第一局部位线的源极端子,并且还具有连接到第一位线的漏极端子。

版权:(C)2008,日本特许厅&INPIT

著录项

  • 公开/公告号JP4607924B2

    专利类型

  • 公开/公告日2011-01-05

    原文格式PDF

  • 申请/专利权人 株式会社東芝;

    申请/专利号JP20070191442

  • 发明设计人 高島 大三郎;

    申请日2007-07-23

  • 分类号G11C11/22;

  • 国家 JP

  • 入库时间 2022-08-21 18:16:42

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