Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts

摘要

An integrated configuration comprising trench MOSFET having trench contacts and trench Schottky rectifier having planar contacts is disclosed. The trench contacts for trench MOSFET provide a lower specific on-resistance. Besides, for trench gate connection, planar gate contact is employed in the present invention to avoid shortage issue between gate and drain in shallow trench gate. Besides, W plugs filled into both trench contacts and planar contacts enhance the metal step coverage capability.