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PHOTORESIST COMPOSITIONS, HARDENED FORMS THEREOF, HARDENED PATTERNS THEREOF AND METAL PATTERNS FORMED USING THEM

机译:光致抗蚀剂组合物,其硬化型式,其硬化型式和使用它们构成的金属型式

摘要

Photoresist compositions that demonstrate superior photolithographic performance and hardened resist films that show superior resistance to solvents, have excellent resistance to under plating during the electrodeposition of metals, and show excellent resist stripping characteristics. These photoresist compositions according to the invention are well-suited as for applications in the manufacture of MEMS and micromachine devices. These photoresist compositions according to the invention comprise one or more epoxide-substituted, polycarboxylic acid Resin Component (A), one or more photoacid generator compounds (B), and one or more solvent (C).
机译:光刻胶组合物表现出优异的光刻性能,而硬化的抗蚀剂膜则表现出优异的耐溶剂性,在​​金属电沉积过程中具有出色的抗底层镀层性,并表现出优异的抗蚀剂剥离特性。根据本发明的这些光致抗蚀剂组合物非常适合用于制造MEMS和微机械设备中的应用。根据本发明的这些光致抗蚀剂组合物包含一种或多种环氧基取代的多元羧酸树脂组分(A),一种或多种光酸产生剂化合物(B)和一种或多种溶剂(C)。

著录项

  • 公开/公告号IL176584A

    专利类型

  • 公开/公告日2011-03-31

    原文格式PDF

  • 申请/专利权人 NIPPON KAYAKU CO. LTD.;MICROCHEM CORP.;

    申请/专利号IL20060176584

  • 发明设计人

    申请日2006-06-27

  • 分类号G03C1/76;G03F7/038;G03F7/40;

  • 国家 IL

  • 入库时间 2022-08-21 18:06:23

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