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THZ QUANTUM CASCADE LASER WITH MICRO-DISC RESONATOR AND VERTICAL EMISSION BY A SECOND-ORDER GRATING

机译:带有微盘谐振器和垂直发射的THZ量子级联激光二阶光栅

摘要

A semiconductor laser includes a laser resonator (1) having a planar active region (3), a first (2) and a second (6) wave-guide layer that define the active region (3). The resonator (1) has a shape that is defined by a perimeter, along which the first layer (2) radiation guide has a plurality of cuts (4) forming a lattice. The cuts are made as at least two adjacent slits (4a, 4b) and a zone between the slits in which an uncut portion (5a) of wave-guiding layer is present. In the case of a circular semiconductor laser, the number of cuts (4) is a prime number, or an odd number that is a multiple of a prime number, the prime number being greater than or equal to five. This way, it is avoided that resonance modes evolve outside of the zone with the cuts, or in any case with a component that is different from zero of the wave vector in a radial direction, and a pure whispering gallery operating mode is obtained, with maximum of the emitted radiation that evolves in a vertical direction, i.e. orthogonal to the plane of the laser resonator, and without the laser emitting radiation evolving in a radial direction.
机译:半导体激光器包括具有平面有源区域(3),限定有源区域(3)的第一(2)和第二(6)波导层的激光谐振器(1)。谐振器(1)具有由周边限定的形状,沿着该周边,第一层(2)的辐射引导件具有形成格子的多个切口(4)。切口形成为至少两个相邻的切口(4a,4b)以及在切口之间的区域,在该区域中存在波导层的未切口部分(5a)。在圆形半导体激光器的情况下,切口(4)的数量是质数或为质数的倍数的奇数,该质数大于或等于五。这样,避免了共振模式随着切口而在区域之外发展,或者在任何情况下都具有在径向方向上不同于波矢量零的分量,并且获得了纯耳语画廊操作模式,其中在垂直方向上(即正交于激光谐振器的平面)并且在没有激光发射辐射的情况下沿径向方向演化的最大发射辐射。

著录项

  • 公开/公告号EP2286493A1

    专利类型

  • 公开/公告日2011-02-23

    原文格式PDF

  • 申请/专利权人 SCUOLA NORMALE SUPERIORE;

    申请/专利号EP20090742417

  • 申请日2009-04-28

  • 分类号H01S5/10;H01S5/18;H01S5/34;H01S5/20;H01S5/42;H01S5/187;

  • 国家 EP

  • 入库时间 2022-08-21 17:55:24

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