POSITIVE RESIST COMPOSITIONS FOR REDUCING LINE WIDTH ROUGHNESS AND IMPROVING A MASK ERROR ENHANCEMENT FACTOR AND A PATTERNING PROCESS

摘要

PURPOSE: A positive resist composition is provided to ensure mask fidelity in ArF lithography technique and to obtain a pattern with very small line width roughness.;CONSTITUTION: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a compound capable of generating an acid in response to actinic light or radiation. The resin component (A) is a polymer comprising recurring units represented by the general formula(1), wherein R1 is each independently hydrogen, methyl or trifluoromethyl, R2 is an acid labile group, R3 is hydrogen or CO2CH3, X is O, S, CH2 or CH2CH2, a and b indicative of ratios of the respective units incorporated are each a number from 0.01 to less than 1.;COPYRIGHT KIPO 2011