METHOD FOR MANUFACTURING A PHASE CHANGE MEMORY DEVICE WITH THE IMPROVED DIODE GAP-FILLING PROPERTY, CAPABLE OF COMPLETELY FILLING A SPACED BETWEEN DIODES USING AN INSULATING MATERIAL

摘要

PURPOSE: A method for manufacturing a phase change memory device with the improved diode gap-filling property is provided to effectively prevent the generation of a leakage current by forming an insulating film with an ozone TEOS film and an HDP insulating film.;CONSTITUTION: A semiconductor substrate(100) with a junction word-line(110) is prepared. A metal word-line(120) in electrical connection with the junction word-line is formed on the semiconductor substrate. A schottky diode(130) is formed on the upper side of the metal word-line. A surface protective film(132) is formed to protect the surface of the schottky diode. A first gap-fill insulating film is formed on the upper side of the surface protective film. A second gap-fill insulating film is formed to fill a space between schottky diodes.;COPYRIGHT KIPO 2011