首页>
外国专利>
SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF IMPROVING THE GATE RESISTANCE REDUCTION AND GIDL PROPERTY OF A BURIED GATE
SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF IMPROVING THE GATE RESISTANCE REDUCTION AND GIDL PROPERTY OF A BURIED GATE
展开▼
机译:能够提高埋入式门的门电阻的降低和基德性能的半导体装置及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the refresh property of a semiconductor device by improving the GIDL(Gate Induced Drain Leakage) property by the void occurring during the deposition of a nitride layer for protecting the gate electrode.;CONSTITUTION: A recess(140) is formed on a semiconductor substrate(100). A first gate electrode(160) is buried within the recess. A side wall spacer is formed on the first gate electrode. A second gate electrode(180) is formed on the first gate electrode including the side wall spacer. A gate protection film(190) is buried within the recess.;COPYRIGHT KIPO 2011
展开▼