PHASE SHIFT MEMORY DEVICE FORMED WITH A METAL WIRING WHICH REMOVED HILLOCK AND VOID PHENOMENA

摘要

PURPOSE: A phase shift memory device formed with a metal wiring is provided to limit the movement and diffusion of the copper ion by comprising a barrier layer made of triple complex layer to limit the reaction between the metal wiring pattern and other layers.;CONSTITUTION: A semiconductor substrate(100) having the conductive region is prepared. An inter-layer insulating film(101) comprises a via hole opening the conductive region of the semiconductor substrate. A barrier layer(103) including the metal ion supplying layer is formed along the via hole. The barrier layer comprises a first barrier layer(103a) made of the first refractory metal material and a second barrier layer(103b) made of the second refractory metal material.;COPYRIGHT KIPO 2011