首页> 外国专利> TRANSISTOR, A MANUFACTURING METHOD THEREOF, AND AN ELECTRONIC DEVICE INCLUDING THE SAME CAPABLE OF IMPROVING PHOTOELECTRIC CONVERSION RELIABILITY WITH HIGH MOBILITY

TRANSISTOR, A MANUFACTURING METHOD THEREOF, AND AN ELECTRONIC DEVICE INCLUDING THE SAME CAPABLE OF IMPROVING PHOTOELECTRIC CONVERSION RELIABILITY WITH HIGH MOBILITY

机译:晶体管,一种其制造方法以及一种电子设备,该电子设备具有能够以高移动性提高光电转换可靠性的能力

摘要

PURPOSE: A transistor, a manufacturing method thereof, and an electrode device including the same are provided to improve the reliability of a flat panel display device by including the transistor which suppresses the change of a property due to light.;CONSTITUTION: A gate(G1) is formed on a substrate(SUB1). A gate insulation layer(Gl1) is formed on the substrate to cover the gate. A channel layer(C1) is formed on the gate insulation layer and is made of oxide with In and Zn and a first element. A source(S1) and a drain(D1) are connected to both sides of the channel layer.;COPYRIGHT KIPO 2011
机译:目的:提供一种晶体管,其制造方法以及包括该晶体管的电极装置,以通过包括抑制因光引起的特性变化的晶体管来提高平板显示装置的可靠性。 G1)形成在基板(SUB1)上。在基板上形成栅极绝缘层(Gl1)以覆盖栅极。沟道层(C1)形成在栅极绝缘层上,并且由具有In和Zn的氧化物以及第一元素制成。源极(S1)和漏极(D1)连接到沟道层的两侧。; COPYRIGHT KIPO 2011

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