METHOD FOR DEPOSITING CONFORMAL AMORPHOUS CARBON FILM BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD)

摘要

The present invention provides the method and apparatus for depositing an amorphous carbon layer on a substrate. In one embodiment, one depositing operation includes that a substrate is arranged in a processing substrate room, a Sources of Hydrocarbon Compounds by carbon to hydrogen atom ratio greater than 1: 2 is passed through the process chamber, by selected from as hydrogen, helium, argon gas, nitrogen, and combinations thereof composed by a plasma starting gas of group be passed through the process chamber, and the volume flow rate of the Sources of Hydrocarbon Compounds is 1 to the volume flow rate ratio of the plasma starting gas: two or more, a plasma is generated in the process chamber, and forms a conformal amorphous carbon layer on the substrate.