METHOD FOR MANUFACTURING SILICON NANO-WIRE DEVICES CAPABLE OF LOWERING THE CONTACT RESISTANCE OF NANO-WIRE BY FORMING METAL ELECTRODE ON WIDE SUPPORTING PARTS IN CONNECTION WITH THE NANO-WIRE

摘要

PURPOSE: A method for manufacturing silicon nano-wire devices is provided to reach the 100% transferring efficiency regardless of the length and the width of the nano-wire using a substrate bonding process and a polishing process.;CONSTITUTION: A silicon nano-wire(150) is prepared at the center part of a first silicon substrate. An adhesive material is coated on one side of the first silicon substrate with the silicon nano-wire. A second dielectric substrate(190) is bonded at one side of the adhesive material. The lower side of the first silicon substrate is polished to expose the silicon nano-wire sensing part of the center part of the first silicon substrate. Supporting parts(140) support the exposed silicon nano-wire, and electrodes(195) are formed on the supporting parts. Electrode protecting materials are formed at the electrodes. An oxide film covering the exposed silicon nano-wire is eliminated, and the electrode protecting materials are eliminated.;COPYRIGHT KIPO 2011