SEMICONDUCTOR DEVICE FOR REDUCING HUMPS AND AN INVERSE NARROW WIDTH EFFECT AND A FABRICATION METHOD THEREOF, CAPABLE OF REDUCING A HUMP PHENOMENON AND INVERSE NARROW WIDTH EFFECT BY IMPROVING THE HUMP PHENOMENON OF A CORNER AREA

摘要

PURPOSE: A semiconductor device for reducing humps and an inverse narrow width effect and a fabrication method thereof are provided to reduce an inverse narrow width effect by applying hump implant technology through which the well doping at the both upper ends of an STI is relatively increased.;CONSTITUTION: In a semiconductor device for reducing humps and an inverse narrow width effect and a fabrication method thereof, an STI pattern is formed on the top of the well by using a hard mask. A hump implant region(385) is formed on an STI(Shallow Trench Isolation)(330) generation region by using the stepped height of the hard mask. The STI generation region is highly doped by a first impurity. The first impurity is increased at the outside of the hump implant region through lateral diffusion.;COPYRIGHT KIPO 2011