PLASMA ETCHING METHOD, PLASMA ETCHING DEVICE, AND COMPUTER STORAGE MEDIUM CAPABLE OF IMPROVING AN ETCHING PROFILE

摘要

PURPOSE: A plasma etching method, a plasma etching device, and a computer storage medium are provided to suppress a bottom distortion by constantly maintaining the temperature of a mounter which mounts a semiconductor wafer.;CONSTITUTION: A photoresist layer(101) is patterned on a substrate(W) with a preset shape. An organic reflection preventing layer(102) is formed on the lower side of the photoresist layer. An SiON layer(103) is formed on the lower side of the organic reflection preventing layer. An amorphous carbon layer(104) is formed on the lower side of the SiON layer. A silicon oxide layer(105) is formed on the lower side of the amorphous carbon layer to be etched.;COPYRIGHT KIPO 2012