Method for closing trench of e.g. microelectronic-electromechanical system component, involves applying lattice on micromechanical component over trench to be formed, and closing openings of lattice by separating filling layer on lattice

摘要

The method involves applying a lattice on a micromechanical component (10) over a trench (16) to be formed. Openings of the lattice are closed by separating a filling layer on the lattice, where the filling layer is a combination of a dielectric layer and/or a leading layer that is made of metal or metal alloy. The trench is etched from the component by the lattice using a trench process, where the lattice is formed in a form of layer stack that comprises a toluene-tetraethoxysilane (TEOS) layer and a silicon nitride (SiN) layer. An independent claim is also included for a component comprising a trench.