Semiconductor device e.g. trench type MOSFET has source metal contact that is deposited above to form electrical contact with electrically conductive layers positioned in peripheral region of semiconductor substrate

摘要

The device (50) has a semiconductor substrate (51) having major surface (52), active area (53) and peripheral region (54) positioned adjacent to active area, where active area has trenches (55) filled with oxides, and electrode (56) positioned in one trench. One dielectric layer (57) is positioned on major surface. Electrically conductive layers are positioned in peripheral region, spatially isolated from one another and extending through dielectric layer. A source metal contact (58) is deposited above to form an electrical contact with electrically conductive layers.