首页> 外国专利> Method of preparation of a substrate made of zno in part or legends figs. 1 a semi - insulating or dope of type p, substrates obtained, and devices producing, electro or optoelectronic comprising

Method of preparation of a substrate made of zno in part or legends figs. 1 a semi - insulating or dope of type p, substrates obtained, and devices producing, electro or optoelectronic comprising

机译:图2是部分由zno制成的基底的制备方法。 1,一种p型半绝缘或涂料,获得的衬底以及生产电或光电子的器件,包括

摘要

Method of preparation of a substrate made of zno all or part of a semi - insulating or p-type doped, from a substrate made of zno with n type doping, in which are placed in contact with the substrate made of zno n doped with a molten salt is selected from among the anhydrous sodium nitrate, and lithium nitrate, potassium nitrate and rubidium nitrate melted anhydrous. The substrate, in particular in the form of a thin layer or nanowires prepared by this process, of the zno or gan may also be grown epitaxially on this substrate. Electronic device, opto-electronic or electro-optical such as a light-emitting diode (led) comprising the substrate.
机译:由具有n型掺杂的zno制成的衬底制备由zno制成的全部或部分半绝缘或p型掺杂的衬底的方法,其中将其与掺杂有n型掺杂的zno制成的衬底接触。熔融盐选自无水硝酸钠,硝酸锂,硝酸钾和硝酸rub熔融的无水。 zno或gan的衬底,特别是通过该方法制备的薄层或纳米线形式的衬底,也可以在该衬底上外延生长。电子设备,包括衬底的光电或光电设备,例如发光二极管(LED)。

著录项

  • 公开/公告号FR2935068B1

    专利类型

  • 公开/公告日2011-02-25

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE;

    申请/专利号FR20080055598

  • 发明设计人 CELINE CHEVALIER;MAURICE COUCHAUD;

    申请日2008-08-14

  • 分类号H01L21/02;H01L51/52;H01L51/56;H01L33/00;

  • 国家 FR

  • 入库时间 2022-08-21 17:46:02

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