ANOMALY CAUSE ANALYSIS METHOD AND ANOMALY ANALYSIS PROGRAM

摘要

PROBLEM TO BE SOLVED: To analyze a cause of an anomaly in a plasma-treated wafer.SOLUTION: A method for analyzing a cause of an anomaly in a wafer W plasma-treated in at least any one of two or more process modules disposed in a clustered plasma treatment system 10 is provided which includes: a storage step of storing information on a feed path of each wafer W fed out from a hoop 115a-115c, fed to at least any one of the two or more process modules and returned to the hoop 115a-115c in association with identification information about the wafer; an inspection step of inspecting states of the treated wafers W; and an anomaly analysis step of comparing the stored feed path information about a wafer W found to be abnormal in the inspection step with the stored feed path information about a wafer W found to be normal and analyzing a cause of an anomaly on the basis of the result of comparison.