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RESIN FOR ETCHING MASK, COATING MATERIAL FOR ETCHING MASK AND METHOD FOR FORMING PATTERN ON SAPPHIRE SUBSTRATE
RESIN FOR ETCHING MASK, COATING MATERIAL FOR ETCHING MASK AND METHOD FOR FORMING PATTERN ON SAPPHIRE SUBSTRATE
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机译:用于绘画面具的树脂,用于绘画面具的涂层材料以及在蓝宝石基质上形成图案的方法
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PROBLEM TO BE SOLVED: To provide a resin for etching mask, providing a coated film having excellent etching resistance and adhesiveness to a sapphire substrate; to provide a coating material for the etching mask, containing the resin for the etching mask; and to provide a method for forming a pattern on the sapphire substrate by using the coating material for the etching mask.;SOLUTION: The resin for the etching mask is a resin for the etching mask usable for the formation of the etching mask arranged on the surface of the sapphire substrate, is the resin (a ring-opened (co)polymer of a cyclic olefin) having a polar group (a polar group having an oxygen atom) and ≤3 of a value calculated by the formula (1): NT/(NC-NO) (1) (wherein, NT is the number of the whole atoms constituting the resin; NC is the total number of the carbon atoms constituting the resin; and NO is the total number of the oxygen atoms constituting the resin).;COPYRIGHT: (C)2012,JPO&INPIT
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机译:解决的问题:提供一种用于蚀刻掩模的树脂,提供一种具有优异的耐蚀刻性和对蓝宝石衬底的粘附性的涂膜;提供用于蚀刻掩模的涂料,其包含用于蚀刻掩模的树脂;并提供一种通过使用蚀刻掩模的涂层材料在蓝宝石衬底上形成图案的方法。;解决方案:蚀刻掩模的树脂是用于蚀刻掩模的树脂,其可用于形成布置在晶片上的蚀刻掩模。蓝宝石基板的表面是具有极性基团(具有氧原子的极性基团)且由式(1)计算出的值的≤的树脂(环状烯烃的开环(共)聚合物) :N T Sub> /(N C Sub> -N O Sub>)(1)(其中N T Sub>是数字构成树脂的所有原子的总数; N C Sub>是构成树脂的碳原子总数; N O Sub>是构成树脂的氧原子总数);版权:(C)2012,JPO&INPIT
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