首页> 外国专利> METHOD FOR MANUFACTURING NEAR-FIELD LIGHT GENERATION ELEMENT, NEAR-FIELD LIGHT GENERATION ELEMENT, NEAR-FIELD LIGHT HEAD, AND INFORMATION RECORDING/REPRODUCING DEVICE

METHOD FOR MANUFACTURING NEAR-FIELD LIGHT GENERATION ELEMENT, NEAR-FIELD LIGHT GENERATION ELEMENT, NEAR-FIELD LIGHT HEAD, AND INFORMATION RECORDING/REPRODUCING DEVICE

机译:制造近场光产生元件,近场光产生元件,近场光头以及信息记录/再现设备的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a near-field light generation element, a near-field light generation element, a near-field light head, and an information recording/reproducing device, which can generate near-field light having a desired spot size while suppressing an increase in manufacturing cost.;SOLUTION: In a first patterning step, a core base material 123 is patterned such that a first base material 123a and a second base material 123b tapered from one end to the other end and a third base material 123c extending from the second base material 123b to the other end with a constant width remain. In a second patterning step, the core base material 123 and a metal film base material 171 are sputter etched in plasma to remove the third base material 123c of the core base material 123.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种制造近场光产生元件的方法,一种近场光产生元件,一种近场光头以及一种信息记录/再现装置,其能够产生具有如下特征的近场光:解决方案:在第一构图步骤中,对芯材基础材料123进行构图,以使第一基础材料123a和第二基础材料123b从一端到另一端逐渐变细,并且从第二基材123b延伸到具有恒定宽度的另一端的第三基材123c保留。在第二构图步骤中,在等离子体中对核心基材123和金属膜基材171进行溅射蚀刻,以去除核心基材123的第三基材123c。版权所有:(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP2012190516A

    专利类型

  • 公开/公告日2012-10-04

    原文格式PDF

  • 申请/专利权人 SEIKO INSTRUMENTS INC;

    申请/专利号JP20110054218

  • 发明设计人 CHIBA TOKUO;OMI MANABU;HIRATA MASAKAZU;

    申请日2011-03-11

  • 分类号G11B5/31;G11B5/02;G02F1/01;G11B7/135;G11B7/22;

  • 国家 JP

  • 入库时间 2022-08-21 17:43:12

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号