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METHOD FOR MANUFACTURING ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE FILM-FORMING MATERIAL, TARGET USING THE TRANSPARENT CONDUCTIVE FILM-FORMING MATERIAL, AND METHOD FOR FORMING ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE FILM
METHOD FOR MANUFACTURING ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE FILM-FORMING MATERIAL, TARGET USING THE TRANSPARENT CONDUCTIVE FILM-FORMING MATERIAL, AND METHOD FOR FORMING ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE FILM
PROBLEM TO BE SOLVED: To provide a titanium (low valence)-doped zinc oxide-based transparent conductive film-forming material enabling film formation of the transparent conductive film having excellent conductivity and being suppressed in abnormal discharge at film formation.;SOLUTION: The method for manufacturing the zinc oxide-based transparent conductive film-forming material uses a raw material powder containing a mixed powder of a low-valence titanium oxide powder and a zinc oxide powder or a zinc hydroxide powder, or a zinc titanate compound powder, and having a proportion of the number of titanium atoms to the total number of metal atoms of 2% and ≤10%, and includes discharge plasma sintering in vacuum or in an inert atmosphere at ≥700°C and ≤1,200°C.;COPYRIGHT: (C)2012,JPO&INPIT
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机译:解决的问题:提供掺杂钛(低价)的氧化锌基透明导电膜形成材料,该材料能够使透明导电膜的膜形成具有优异的导电性并且抑制膜形成时的异常放电。氧化锌类透明导电膜形成材料的制造方法,使用含有低价氧化钛粉末和氧化锌粉末或氢氧化锌粉末或钛酸锌化合物粉末的混合粉末的原料粉末,以及钛原子数相对于金属原子总数的比例> 2%和≤10%,并且包括在真空或惰性气氛中在≥700℃和≤1,200℃下进行放电等离子体烧结。 C .;版权:(C)2012,JPO&INPIT
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