Organic and the plasma etching remainder of the semiconductor device in order to exfoliate

摘要

In order to exfoliate the photoresist from the baseplate, from the baseplate the etching remainder in order to wash and being the composition in order to etch silicon dioxide, approximately 0.01 - approximately 10 mass % the fluoride compound of 1 kinds or more, approximately 10 - approximately 95 mass % organic sulfoxide or the sulfonic solvent, and approximately 20 - approximately 50 mass % the composition which features that the water is included. The composition of this invention the corrosion inhibiter and the chelation medicine, the auxiliary solvent, the basic amine compound, the surface active agent, as needed may include acid and the base.