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With the production mannered null microwave photo-conduction attenuation modulo minority carrier life time modulo
With the production mannered null microwave photo-conduction attenuation modulo minority carrier life time modulo
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机译:用生产出的零微波光导衰减模为少数载流子寿命为模
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摘要
PROBLEM TO BE SOLVED: To provide a method of evaluating a silicon substrate, in which a metal impurity concentration in the substrate is accurately evaluated with high sensitivity by suppressing recombination on a substrate surface more than before.;SOLUTION: The method of evaluating the silicon substrate, in which metal contamination of the silicon substrate is evaluated in a microwave photoconductive decay method minority carrier lifetime method, is characterized by measuring a recombination lifetime in the silicon substrate by injecting carriers at 3×1012 to 1×1013 Photons/cm2 when the silicon substrate is a P-type silicon substrate or at 2×1011 to 1×1012 Photons/cm2 when the silicon substrate is an N-type silicon substrate for microwave photoconductive decay method minority carrier excitation after forming a passivation film by thermal oxidation on the surface of the silicon substrate.;COPYRIGHT: (C)2010,JPO&INPIT
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机译:解决的问题:提供一种评估硅基板的方法,其中通过比以往更多地抑制基板表面上的复合,以高灵敏度准确地评估基板中的金属杂质浓度。;解决方案:评估硅的方法通过微波光导衰减法,少数载流子寿命方法评估硅衬底的金属污染的衬底,其特征在于,通过在3×10 12 Sup>处注入载流子来测量硅衬底中的复合寿命。当硅衬底是P型硅衬底时或在2×10 11 Sup>到1×10时,为1×10 13 Sup>光子/ cm 2 Sup>。当硅基板是用于微波光电导衰减法的N型硅基板时, 12 Sup>光子/ cm 2 Sup>。通过热氧化在钝化层表面形成钝化膜后,少数载流子激发。硅基板。; COPYRIG HT:(C)2010,日本特许厅&INPIT
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