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Electrical characteristics measurement circuit, delay library creating apparatus, how to create a delay library, and design method of a semiconductor integrated circuit

机译:电特性测量电路,延迟库创建装置,如何创建延迟库以及半导体集成电路的设计方法

摘要

PROBLEM TO BE SOLVED: To provide a delay library creation method for more accurately dividing a variation in delay values into a random component, a shot dependence component and an in-plane tendency component of a systematic component.;SOLUTION: The delay library creation method is a method for creating a delay library in which delay values of circuit components of a logic circuit are stored. The method comprises (a) a step for calculating first delay data 48 depending upon the position of a semiconductor wafer in-plane, and second delay data including a random variation delay value that does not depend upon the position of the semiconductor wafer in-plane and an exposure dependence variation delay value caused by exposure processing by performing a wavelet analysis on the basis of first electrical characteristic data 44 on a semiconductor wafer of a circuit component, and (b) a step for separating the random variation delay value from the exposure dependence variation delay value and making the random variation delay value and the exposure dependence delay value to be third delay data and fourth delay data 46, respectively by performing a Fourier analysis on the basis of the second delay data.;COPYRIGHT: (C)2008,JPO&INPIT
机译:要解决的问题:提供一种延迟库创建方法,以更准确地将延迟值的变化划分为系统组件的随机分量,散布依赖分量和平面内趋势分量。;解决方案:延迟库创建方法一种用于创建延迟库的方法,其中存储逻辑电路的电路组件的延迟值。该方法包括(a)用于根据半导体晶片平面内的位置来计算第一延迟数据48和包括不依赖于半导体晶片平面内的随机变化延迟值的第二延迟数据的步骤。以及通过基于电路部件的半导体晶片上的第一电特性数据44进行小波分析而由曝光处理引起的曝光依赖性变化延迟值,以及(b)从曝光中分离随机变化延迟值的步骤依赖变化延迟值,并通过基于第二延迟数据进行傅立叶分析,将随机变化延迟值和曝光依赖延迟值分别设为第三延迟数据和第四延迟数据46。版权所有:(C)2008 ,JPO&INPIT

著录项

  • 公开/公告号JP4845202B2

    专利类型

  • 公开/公告日2011-12-28

    原文格式PDF

  • 申请/专利号JP20060307375

  • 发明设计人 堀内 賢一;

    申请日2006-11-14

  • 分类号G06F17/50;H01L27/04;H01L21/822;H01L21/82;

  • 国家 JP

  • 入库时间 2022-08-21 17:35:45

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