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COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE
COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE
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机译:含硅薄膜的低温沉积的组合物和方法,包括硅,氮化硅,二氧化硅和/或氧化硅的薄膜
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摘要
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., 500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
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机译:在半导体器件制造中用于形成含硅膜的硅前体,例如低介电常数(k)薄膜,高k栅极硅酸盐,低温硅外延膜和包含氮化硅(Si 3 Sub> N 4 Sub>),氮氧化硅(SiO x Sub> N y Sub>)和/或二氧化硅(SiO 2 Sub>) 。本发明的前体适合在低温(例如,<500℃)化学气相沉积工艺中使用,用于制造ULSI器件和器件结构。
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