首页> 外国专利> SUBSTRATE, TEMPLATE SUBSTRATE, SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT PRODUCING METHOD, ILLUMINATION DEVICE USING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ELECTRONIC DEVICE

SUBSTRATE, TEMPLATE SUBSTRATE, SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT PRODUCING METHOD, ILLUMINATION DEVICE USING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ELECTRONIC DEVICE

机译:基板,模板基板,半导体发光元件,半导体发光元件的制造方法,使用半导体发光元件的照明装置以及电子设备

摘要

Disclosed is a semiconductor light emitting element (LC) provided with a substrate (110) having one surface on which plural hexagonal-pyramid-shaped protrusions (110b) are provided, a base layer (130) provided so as to be in contact with the surface on which the protrusions (110b) are provided, an n-type semiconductor layer (140) provided so as to be in contact with the base layer (130), a light emitting layer (150) provided so as to be in contact with the n-type semiconductor layer (140), and a p-type semiconductor layer (160) provided so as to be in contact with the light emitting layer (150). Each protrusion (110b) scatters light in lateral and oblique directions within the semiconductor light emitting element (LC). The protrusions are densely arranged on a substrate on which semiconductor layers are laminated, so that the light extraction efficiency is improved.
机译:公开了一种半导体发光元件(LC),其具有基板( 110 ),所述基板( 110 )的一个表面上具有多个六边形金字塔形突起( 110 b < / I>),设置基底层( 130 ),使其与突起( 110 b ),设置为与基础层( 130 )接触的n型半导体层( 140 ),发光层( 150 )以使其与n型半导体层( 140 )接触,并设置p型半导体层( 160 )从而与发光层( 150 )接触。每个突起( 110 b )在半导体发光元件(LC)内沿横向和倾斜方向散射光。突起密集地布置在其上层叠有半导体层的基板上,从而提高了光提取效率。

著录项

  • 公开/公告号US2012248459A1

    专利类型

  • 公开/公告日2012-10-04

    原文格式PDF

  • 申请/专利权人 YOHEI SAKANO;

    申请/专利号US201013516295

  • 发明设计人 YOHEI SAKANO;

    申请日2010-12-13

  • 分类号H01L29/20;H01L33;H01L29/02;

  • 国家 US

  • 入库时间 2022-08-21 17:33:43

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