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METHOD AND SYSTEM FOR DESIGN OF ENHANCED ACCURACY PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY
METHOD AND SYSTEM FOR DESIGN OF ENHANCED ACCURACY PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY
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机译:带电粒子束光刻的增强精度模式设计方法和系统
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摘要
A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
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