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Surface treatment and passivation of AlGaN/GaN HEMT
Surface treatment and passivation of AlGaN/GaN HEMT
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机译:AlGaN / GaN HEMT的表面处理和钝化
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摘要
In the preferred embodiments, a method to reduce gate leakage and dispersion of group III-nitride field effect devices covered with a thin in-situ SiN layer is provided. This can be obtained by introducing a second passivation layer on top of the in-situ SiN-layer, in combination with cleaning of the in-situ SiN before gate deposition and before deposition of the second passivation layer.
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